摘要
用热蒸发法和热处理制备稀土Dy掺杂金属氧化物CdO,ZnO和SnO2薄膜,研究不同Dy掺杂浓度及热处理对3种薄膜性能的影响。XRD和SEM测试结果显示:适当的Dy掺杂和热处理可改善薄膜的结构特性,使薄膜表面的致密性变好。CdO,ZnO和SnO2薄膜的最佳掺Dy原子数分数为5%,5%和3%。掺Dy后Cd O,ZnO和SnO2薄膜的导电类型均为n型,电阻值降低约一个数量级。Dy掺杂使得薄膜的致密性增加而导致光透过率降低。制备的薄膜都是直接带隙半导体,相应的光学带隙:Cd O约2.232 eV,CdO∶Dy(Dy原子数分数5%)的略增为2.241 e V,ZnO薄膜约为3.31 eV;ZnO∶Dy(Dy原子数分数5%)约3.25 eV,SnO2薄膜约3.07 eV,SnO2∶Dy(Dy原子数分数3%)约3.03 eV。
CdO, ZnO and SnO2 films with rare earth Dy doped were prepared by thermal evaporation and heat treatment, to study the effects of different concentrations of Dy and heat treatment on the three types of film properties. XRD and SEM tests show that Dy doped and effective heat treatment can improve the structural properties of the films and increase the densification of the film surface. The most appropriate concentration of Dy doping CdO, ZnO and SnO2 thin films were 5%, 5% and 3%. The conductivity type of CdO, ZnO and SnO2 thin film with Dy doped were n-type, and the resistor were reduced by about an order of magnitude. The increase of densification of the films with Dy doped reduced the transmittance of films. Thin films were direct bandgap semiconductors, and the optical band gap of CdO is about 2. 232 eV, CdO： Dy （5%） slightly increases to 2.241 eV, ZnO film is about 3.31 eV, ZnO ： Dy （5%） is about 3.25 eV, SnO2 film was about 3.07 eV, and SnO2 ： Dy （3%） is about 3.03 eV.
出处
《半导体技术》
CAS
CSCD
北大核心
2014年第12期936-942,共7页
Semiconductor Technology
