摘要
使用除氢、高温成核和低温生长的三段式快速热处理方法，将常规方法制备的氢化非晶硅（ａ－ＳｉＨ）薄膜晶化成纳米硅（ｎｃ－Ｓｉ）薄膜．该薄膜在波长为４５７．９ｎｍ的Ａｒ＋激光的激发下，在室温发射出蓝绿光．
Nonocrystalline Si (nc Si) thin films were prepared by crystallization of the hydrogenaed amorphous Si (a Si) films using the three step Rapid Thermat Processing (RTP), i. e. evolution of the hydrogen, nucleation at high temperature and growth at low temperture. Green/Blue light emisson from the nc Si thin films were observed under excitaion of Ar + laser (457 9nm)at room temperature.
出处
《发光学报》
EI
CAS
CSCD
北大核心
1998年第3期212-215,共4页
Chinese Journal of Luminescence
基金
中国科学技术大学研究生院(北京)院长基金
