摘要
通过掺少量Te提高ZnSe受主杂质浓度,从而制成ZnSe p-n结太阳电池.单结ZnSe光电池在AM1条件下光谱响应半宽度范围365～450nm,波长为400nm时量子效率最大.ZnSe是一种好的叠层多结光电池的顶层材料,可以提供较高的开路电压,并且是底层电池的窗口;在单结ZnSe光电池的基区指数掺杂,95%的区域内能产生大于104V/cm的附加电场,在400～475nm波长范围内,该电场可以使其外量子效率增加1～1.5倍.
The ZnSe p-n junction solar cells are easily made because acceptor density of ZnSe can be increased through adding a little bit of tellurium. The spectrum response semibreadth of the single junction ZnSe solar cell is 365-450 nm under AMI, and the maximum of external quantum efficiency presents to 400 nm. ZnSe is a finer top material of multi-junction tandem photoelectric cells. It can provide high open circuit voltage and is window of the bottom junctions. Exponential function doping in the base region of ZnSe photoelectric cells, 95% of the region there is over 104 V/cm additive electric field. From 400 to 475 nm, the external quantum efficiency may be increased 1-1.5 times due to the existence of the electric field.
出处
《太阳能学报》
EI
CAS
CSCD
北大核心
2004年第6期804-806,共3页
Acta Energiae Solaris Sinica
基金
河北省自然科学基金资助项目(697181)
关键词
ZnS光电池
梯度掺杂
电场分布
光谱响应
Electric current control
Electric fields
Quantum theory
Semiconductor junctions
Tellurium
Voltage control
Zinc compounds
