摘要
为了提高Bi2O3薄膜的光电特能,采用溶胶-凝胶法在FTO衬底上制备了β-Bi2O3薄膜。采用X射线衍射、扫描电子显微镜、紫外-可见光吸光度和光电转换效率的测试研究了热处理工艺对薄膜结构和光电特性的影响。结果表明:当退火温度为450℃时,制备出的Bi2 O3薄膜结晶度高,禁带宽度为2.71 eV,在1 mol/L NaOH溶液,0 V(vs Ag/AgCl)偏压条件下,350 nm处单色光电转换效率(IPCE)最高,达25.5%。
Bi2O3 thin films were successfully prepared on FTO substrates by the sol-gel route.The effect of annealing temperature on the film structure and photoelectrochemical performance was discussed.Bi2O3 thin films were characterized by X-ray diffraction(XRD),scanning electron microscopy(SEM),UV-vis spectroscopy and incident photon-to-electron conversion efficiency(IPCE).The results show that the 450 ℃ annealed sample shows a good crystallinity and possesses a band gap of 2.71 eV.The IPCE can reaches 25.5% at 350 nm without any additional potential vs Ag/AgCl in 1 mol/L NaOH solution.
出处
《材料保护》
CAS
CSCD
北大核心
2013年第S1期62-64,共3页
Materials Protection
基金
高等学校博士学科点专项科研基金(20110181110003)
成都市科技局攻关计划(10GGYB380GX-023
10GGYB828GX-023)资助
