期刊文献+

反应溅射氧分压对In_2O_3薄膜光电转换性能的影响

Effect of Reactive Sputtering O_2 Pressure on the Photoelectrochemical Property of In_2O_3 Thin Film
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摘要 用直流磁控溅射在不同溅射功率下制备不同厚度的In2O3薄膜。通过XRD分析薄膜结构,用紫外可见光谱分析薄膜的光吸收能力,并推导薄膜的光学带隙。结果表明,室温反应溅射条件下,直接溅射得到的薄膜都是非晶薄膜,且吸光度随制备氧分压的增大而减小,相同功率下,薄膜厚度随氧分压增大而减小,光吸收起始位置也随之蓝移。相同偏压下,薄膜的单色光转换效率(IPCE)随氧分压增大先减小后增大。在0.5 mol/L Na2SO4溶液中,0.26 Pa氧分压得到的样品IPCE为14.8%(λ=400 nm)。在1.0 V Ag/AgCl偏压下,0.26 Pa氧分压样品光电流为28μA/cm2。 In2O3 thin films were prepared by reactive sputtering under different O2 pressure.The film structure was characterized by X-ray diffraction.The light absorbance ability was estimated by absorbance spectra.The result shows that all films exhibit amorphous structure.The absorbance decrease with the O2 pressure increasing from 0.26Pa to 0.40Pa,however,the 0.55Pa sample shows higher absorbance.The film thickness decreases with the O2 pressure increasing and the initial absorbing site of light shows blue shift.The photo-to-electron conversion efficiency(IPCE) of 0.26Pa sample is 14.8% in 0.5M Na2SO4 solution with 1.0V bias vs.Ag/AgCl.The photo current is 28uA/cm2.
出处 《材料保护》 CAS CSCD 北大核心 2013年第S1期68-70,共3页 Materials Protection
基金 成都市科技局攻关计划(10GGYB380GX-023 10 GGYB828 GX-023)
关键词 In2O3薄膜 反应溅射 IPCE 光电流 氧分压 In2O3 thin film,Reactive sputtering,IPCE,Photocurrent,O2 pressure
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