摘要
采用射频磁控溅射法在有机的柔性衬底上制备出了SnO2 :Sb透明导电膜 ,讨论了薄膜的结构和光电性质对制备条件的依赖关系。制备的样品为多晶薄膜 ,并且保持了二氧化锡的金红石结构。对衬底适当的加热 ,当衬底温度为2 0 0℃时 ,在PI(Polyisocyanate聚酰亚胺 )胶片上制备出了性能良好的薄膜 ,薄膜相应的自由载流子霍耳迁移率有最大值为 13cm2 /VS ,载流子浓度为 15 .5× 10 19cm-3 ,薄膜的电阻率有最小值 3.7× 10 -3 Ω·cm。在可见光范围内 ,样品的相对透过率为 85
Transparent conducting SnO 2∶Sb films were deposited on organic substrates by r.f.magnetron sputtering.Structural and photoelectric properties of the films dependence of preparation condition were discussed.Polycrystalline films still retained the rutile structure. Transparent conducting SnO 2∶Sb films with good properties were deposited on PI substrate when substrates were heated properly. Film Hall mobility of 13cm 2/VS,Carrier concentration of 15.5×10 19 cm -3 and resistivity of 3.7×10 -3 Ω·cm at substrates temperature of 200 ℃. The average transmittance reaches 85% in visible region.
出处
《太阳能学报》
EI
CAS
CSCD
北大核心
2003年第2期273-277,共5页
Acta Energiae Solaris Sinica
基金
国家自然基金项目 ( 60 1760 2 1)
