摘要
利用三步共蒸法工艺在10cm×10cm玻璃衬底上生长出电池吸收层CuIn_(0．7)Ga_(0．3)Se_2薄膜。通过XRF和XRD谱,分析了不同预置层(Precursor)(In_(0．7)Ga_(0．3))_2Se_3生长温度下CuIn_(0．7)Ga_(0．3)Se_2薄膜的结构特性。预置层生长温度分别为300、340和400℃时,所制备的集成组件的转换效率对应为4．23%、5．16%和7．03%(测试条件为：AM1．5,1000W/cm^2)。其组件效率的提高,归因于在预置层生长温度为400℃时所制备的CuIn_(0．7)Ga_(0．3)Se_2薄膜具有良好的结构特性和组份均匀性。
The absorber layer CuIn0.7Ga0.3Se2 films were deposited on a 10cm ×10cm substrate using a three-step coevaporation process. Structural properties of CuIn0.7Ga0.3Se2 films fabricated from （In0.7 Ga0.3 ）2Se3 precursors under various growth temperatures as 300, 340 and 400℃ have been investigated by XRD and XRF spectra. For the integrated modules based on the above three absorbers, the conversion efficiency was 4.23%, 5.16% and 7.03%, respectively. The results showed that the absorbers grown from （In0.7 Ga0.3 ）2Se3 precursors under the substrate temperature of 400℃ have fine uniformity composition and structural properties.
出处
《太阳能学报》
EI
CAS
CSCD
北大核心
2006年第9期895-899,共5页
Acta Energiae Solaris Sinica
基金
国家高技术研究发展计划(863)(20041AA513020)
