摘要
采用磁控溅射技术在不同溅射功率下制备了ZnO薄膜。研究了薄膜的沉积速率、光电特性以及不同功率条件下制备的ZnO薄膜对HIT电池开路电压的影响。结果表明:在溅射功率为200W时制备的薄膜,具有良好的导电性和光透过性;将其应用到HIT电池中,得到的开路电压最高。该研究对提高HIT电池性能具有一定的参考意义。
ZnO transparent conductive oxide thin films were deposited by radio-frequency magnetron sputtering technique at different sputtering powers. The effect of the sputtering powers on the growth rate, photoelectric properties of these films and the open circuit voltage of HIT solar cells were studied. The results show that the resistivity and optical transmittance of the film deposited at sputtering power of 200 W are good. With this film, the highest open circuit voltage was get for HIT solar cells. The research has referenced value to the improvement of the properties of HIT solar cells.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2009年第2期354-357,共4页
Journal of Synthetic Crystals
基金
江苏省高技术招标项目(BG2007002)
江苏省六大人才高峰项目
信息产业部电子发展基金项目