摘要
中频溅射制备ZnO薄膜可改善射频磁控溅射方式中沉积速率过慢的缺点。对于多层薄膜的制备,对向靶的设计可使样品避开等离子体直接轰击,减少基底薄膜的损伤。本文采用这项技术制备厚度约为50nm的ZnO薄膜,通过调整工作压强、溅射功率、氧氩比等工艺条件,制备出均匀致密,结晶质量高,电阻率在102～103Ω.cm之间,可见光区透过率达到90%的ZnO薄膜。将其应用到C IGS太阳电池中发现,具有50nm厚度的ZnO层的C IGS太阳电池的性能较无ZnO层的太阳电池都有了很大提高。
Thickness of 50nm ZnO thin films were deposited via MF magnetron sputtering from ceramic targets with facing targets. It can reduce the effect of the bombardment of the plasma on the base thin films using the facing targets, and increase the deposition rate. The range of resistivity of 10^2～10^3Ω·cm and the optical transmittance over 90% in the visible range are obtained for these thin ZnO films by adjusting working pressure, sputtering power and the ratio of O2/Ar. Therefore, the ZnO thin films are applied in the CIGS solar ceils,which exhibit a stable conversion efficiency of 10.5%.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2007年第3期584-588,共5页
Journal of Synthetic Crystals
基金
国家863计划项目(No.2004AA513020)
