摘要
采用磁控溅射技术,共溅射CuIn合金靶和纯In靶,CuIn合金靶的溅射功率不变,通过改变纯In靶的溅射功率,制备了具有不同In/Cu原子比的CuIn预制层;然后以固态硒粉为硒源,采用三步升温硒化方式对CuIn预制层进行硒化。通过EDS、XRD和SEM分析方法,研究了预制层中不同的In/Cu原子比对铜铟硒(CIS)薄膜的成分、结构和形貌的影响。结果表明:CIS薄膜主要由CuInSe2相构成,但存在少量的CuSe相,随着CuIn预制层中In/Cu原子比的逐渐增大,CuSe相所占比例减少,CIS薄膜中In/Cu和Se/(Cu+In)的比值也相应增大,CuInSe2大颗粒分布逐渐均匀,大颗粒之间的细小颗粒逐渐消失。
The precursor layer with different In/Cu atom ratio were prepared by co-sputtering of CuIn alloy target and pure In target, then selenized by using Se powder as the Se source to form CuInSe/thin films. The CulnSe2 thin films were analyzed by SEM, EDS and XRD. The results reveal that the main phase of thin films is CuInSe2, and the CuSe phase also is detected in the XRD patterns. However, as the increase of In/Cu atom ratio in precursor layer, the CuSe phase ratio decreased but the Se/（Cu＋In） atom ratio and In/Cu atom ratio of CIS thin film increase accordingly. The large particles of CIS thin films are more uniform and small particles between the big particles disappeared gradually.
出处
《可再生能源》
CAS
北大核心
2013年第5期9-12,17,共5页
Renewable Energy Resources
基金
广州市科技项目(12C52111614)
广东省省部产学研项目(2011A090200003)
