摘要
采用Cu、In双靶,低功率直流磁控溅射的方法沉积Cu-In双层预置膜,然后采用固态源硒化法生成CuInSe_2 (CIS)薄膜。采用SEM和EDX观察和分析薄膜的表面形貌与成分,用XRD表征薄膜的组织结构。重点分析了不同衬底,不同铜、铟溅射顺序对Cu-In双层预置膜与CuInSe_2半导体薄膜成分、形貌和相结构的影响,分析了不同溅射顺序下薄膜的生长机制。以镀Mo玻璃为衬底生长的薄膜具有更理想的形貌;在Cu-In膜制备过程中采用先溅射Cu后溅射In的沉积顺序,能有效地利用元素In润湿能力强的特点,使Cu、In充分结合形成均匀致密的Cu-In预置膜,经硒化处理得到了具有单一黄铜矿结构的CuInSe_2半导体薄膜。
The thin films of Cu-In double-layer precursor have been prepared by means of low power DC sputtering techniques. The CuInSe2 （CIS） films were synthesized by selenization in a selenium atmosphere. SEM and EDX observe the surface morphologies and to determine the atomic concentrations in both the Cu-In precursors films. Their micro structure was characterized by XRD. The influence of substrates and sputtering sequence were used to and the CIS on the property of films has been studied. The growth mechanism of Cu-In films under different sputtering sequences has been discussed. The Cu-In film deposited on Mo-coated glass substrate has more ideal surface morphologies; in the case of sputtering Cu firstly followed by In, the In can wet over the whole surface of Cu layer effectively because of it＇ s wetting ability. Based on this sputtering sequence, the In and Cu can combine into a uniform and compact Cu-In precursor with small grain sizes. After selenizing, the CIS films with a single chalcopyrite phase were obtained.
出处
《太阳能学报》
EI
CAS
CSCD
北大核心
2008年第3期312-318,共7页
Acta Energiae Solaris Sinica
关键词
磁控溅射
Cu-In双层膜
溅射顺序
CIS膜
co-sputtering
Cu-In double-layer films
sputtering sequence
CIS thin films
