摘要
采用一步共蒸法制备铜铟镓硒(CIGS)薄膜,研究讨论不同衬底温度条件对制得薄膜结构和形貌的影响。薄膜的结构和形貌分别利用X射线衍射(XRD)与扫描电子显微镜(SEM)进行检测。结果表明,衬底温度对CIGS薄膜的生长有很大的影响,当温度为250℃时,开始有CIGS晶相生成;随着温度的升高晶体颗粒逐渐增大;当温度达到450℃时,生成了结晶度较好(112)择优取向的CuIn0.7Ga0.3Se2相,制得的CIGS薄膜初步达到制备CIGS电池的条件。
Cu（In,Ga）Se2（CIGS）thin films were deposited by an one-stage co-evaporation process.This paper mainly discusses the effects of substrate temperature（Tsub）on the structure and morphology of CIGS thin films.The samples were characterized by X-ray diffraction（XRD）and scanning electron microscopy（SEM）.The results first show that the Tsubhad a great influence on the growth of CIGS thin film.The grain size increases with increasing Tsub.When Tsubreaches 250℃,the CIGS phase starts to form,but only when the Tsubis as high as 450℃,the GIGS film deposited can preliminarily meet the requirements of CIGS solar cell.
出处
《材料科学与工程学报》
CAS
CSCD
北大核心
2015年第3期460-464,共5页
Journal of Materials Science and Engineering
关键词
CIGS
一步法
薄膜太阳电池
衬底温度
CIGS
one-stage process
thin film solar cell
substrate temperature
