摘要
综述了CuIn1-xGaxSe2(CIGS)的晶体结构、光学性质和电学性质,介绍了其禁带宽度、导电类型、吸收系数、晶界面复合速率和少子寿命等重要参数。重点介绍了利用磁控溅射系统制备CIGS薄膜的两种制备工艺:磁控溅射金属预制层硒化法和单步溅射法;综述了非真空制备工艺中常用的电化学沉积法。分析了CIGS现存问题:制备工艺复杂、成本高,稀有金属In、Ga的短缺;并提出了相应的解决措施及发展趋势。
CuIn xGaxSe2 （CIGS） as a photovoltaic material is reviewed in this paper in terms of their microstructures, optical and electrical properties. Some key characteristics, such as band gap, conductivity type, absorption coefficient, grain boundary recombination rate, minority carrier lifetime and so on, are introduced. In addition, two preparation methods of CIGS based on magnetron sputtering are presented. One is selenization of stack element layer; the other is single-step sputtering. Electrodeposition, a non-vacuum preparation of CIGS, is compared with the magnetron sputtering methods. Finally, the existing problems that hinder the development of CIGS including sophisticated preparation, high cost and shortage of rare metal, are discussed. Finally, the latest development of CIGS and development trends at home and abroad are analyzed.
出处
《材料科学与工程学报》
CAS
CSCD
北大核心
2013年第3期473-478,共6页
Journal of Materials Science and Engineering
基金
上海市青年科技启明星计划(跟踪)资助项目(11QH1401000)
教育部科学技术研究重点资助项目(211055)
上海市科委重点资助项目(12JC1404400
11160500700)
上海市教育委员会科研创新资助项目(11ZZ168)
关键词
铜铟镓硒
结构性质
磁控溅射
电化学沉积法
Culnl-xGaxSe2
structure and property
magnetron sputtering
electrodeposition
