摘要
本文首次观察了用ＭＯＣＶＤ方法生长的ＧａｘＩｎ１－ｘＰ外延层的能带隙移动，并给出了ＧａｘＩｎ１－ｘＰ外延层光荧光（ＰＬ）峰能量随组分ｘ的变化关系，结果表明ＰＬ是探测混晶组分的简单而有效的方法之一。
inter facial elastic strain induced by the lattice parameter mismatch between epilayer and substrate results in significant energy band-gap shift for GaxIn1-xP epitaxial layers.The energy band-gap shift was determined by comparing the photoluminescence peakenergies of the as-grown GaxIn1-xP layer with those from free-standing layer removed fromthe GaAs substrates. We found that photoluminescence is a accurate means to measure composition.
出处
《光谱学与光谱分析》
SCIE
EI
CAS
CSCD
北大核心
1994年第3期27-28,40,共3页
Spectroscopy and Spectral Analysis
