摘要
Enhancement-mode(E-mode)GaN-on-Si radio-frequency(RF)high-electron-mobility transistors(HEMTs)were fabri-cated on an ultrathin-barrier(UTB)AlGaN(<6 nm)/GaN heterostructure featuring a naturally depleted 2-D electron gas(2DEG)channel.The fabricated E-mode HEMTs exhibit a relatively high threshold voltage(VTH)of+1.1 V with good uniformity.A maxi-mum current/power gain cut-off frequency(fT/fMAX)of 31.3/99.6 GHz with a power added efficiency(PAE)of 52.47%and an out-put power density(Pout)of 1.0 W/mm at 3.5 GHz were achieved on the fabricated E-mode HEMTs with 1-μm gate and Au-free ohmic contact.
基金
supported in part by the National Key Research and Development Program of China under Grant 2022YFB3604400
in part by the Youth Innovation Promotion Association of Chinese Academy Sciences(CAS)
in part by CAS-Croucher Funding Scheme under Grant CAS22801
in part by National Natural Science Foundation of China under Grant 62074161,Grant 62004213,and Grant U20A20208
in part by the Beijing Municipal Science and Technology Commission project under Grant Z201100008420009 and Grant Z211100007921018
in part by the University of CAS
in part by IMECAS-HKUST-Joint Laboratory of Microelectronics.
