摘要
利用自主研制的SiC衬底的栅宽为2.5 mm的AlGaN/GaN HEMT器件,设计完成了单级X波段氮化镓固态放大器模块.模块由AlGaN/GaN HEMT器件、偏置电路和微带匹配电路构成.采用金属腔体和测试夹具,保证在连续波下具有良好的接地和散热性能.利用双偏置电路馈电,并且采用独特的电容电阻网络和栅极串联电阻消除了低频和射频振荡.利用微带短截线完成了器件的输入输出匹配.在8 GHz频率及连续波情况下(直流偏置电压为Vds=27 V,Vgs=-4.0 V),放大器线性增益为5.6 dB,最大效率为30.5%,输出功率最大可达40.25 dBm(10.5 W),此时增益压缩为2 dB.在带宽为500 MHz内,输出功率变化为1 dB.
Based on the self-developed AlGaN/GaN HEMT with 2.5-mm gate width technology on the SiC substrate, the X-band GaN solid-state power amplifier module is fabricated. The module consists of the AlGaN/GaN HEMT, DC-bias circuit and microstrip line. The chamber structure made of metal and the test fixture are designed for grounding and thermal transmission under the CW operating condition. Two section bias circuits for the AlGaN/GaN HEMT are presented. The special R-C networks and gate resistance are used for cancellation of self-oscillation at both the low frequency and radio frequency. The mierostrip stubs are used for input matching and output matching. Under the Vds = 27 V, Vgs = -4.0 V CW operating condition at 8 GHz, the amplifier module exhibits a line gain of 5.6 dB with a power-added efficiency of 30. 5 G, the output power of 40. 25 dBm（10. 5 W）, and the power gain compression of 2 dB. Between 8 GHz and 8.5 GHz, the variation of output power is 1 dB.
出处
《西安电子科技大学学报》
EI
CAS
CSCD
北大核心
2009年第6期1039-1043,共5页
Journal of Xidian University
基金
国家自然科学基金重点基金支持研究项目资助(60736033)
