摘要
设计并封装了一款1 700 V/1 600 A Si C混合IGBT功率模块,对模块进行了常规电学特性测试,并与全Si功率模块进行了比较。由于Si C肖特基二极管优异的反向恢复特性,使得模块的开关性能得到明显提升,有效降低了模块的能量损耗。通过优化模块结构及栅极串联电阻,进一步降低了模块的开关损耗,使Si C混合模块比全Si IGBT模块具有更加优越的性能。
It designed and packaged a 1 700 V/1 600 A hybrid power IGBT module. Common electrical characteristics were measured and compared with those of a similar all-Si power module. The superior reverse recovery performance of SiC-SBDs leads to an obvious promotion in the switching characteristics and a reduction in energy losses. A further reduction in switching losses can be obtained by optimizing the module structure and gate resistance in series, which shows the more advanced performance of SiC hybrid power module.
出处
《大功率变流技术》
2015年第5期43-48,共6页
HIGH POWER CONVERTER TECHNOLOGY
关键词
碳化硅
肖特基二极管
IGBT
混合功率模块
Silicon Carbide （SIC）
Schottky barrier diode （SBD）
IGBT
hybrid power module
