摘要
为更好地发挥全SiC器件的开关速度快、损耗低等优势,研究了某款3300 V全SiC MOSFET器件的开关特性。首先,通过理论分析阐述了开关变化过程,并给出了可量化的计算方法;其次,从驱动电阻、结温、回路杂散电感等方面探寻了开关特性变化的规律;最后,在样机上进行了验证。结果表明,文章中所述优化开关特性的方法对全SiC逆变器的工程应用有一定的指导意义。
Depending on the advantages of SiC MOSFET with faster switching and lower on-state losses,the switching characteristics of a 3300 V full SiC MOSFET device were studied to make better use of the device.Firstly,the switching processes of the SiC device were illustrated in theory,and the quantifiable method was provided;secondly,the effects of gate drive resistors,junction temperature and stray inductance on switching characteristics were investigated;finally,a prototype test was carried out.The results indicated that the switching characteristics optimizing method as discussed can provide application guidance to the full SiC invertors.
作者
孙康康
陈燕平
忻兰苑
王晓年
余开庆
胡长风
SUN Kangkang;CHEN Yanping;XIN Lanyuan;WANG Xiaonian;YU Kaiqing;HU Changfeng(CRRC ZIC Research Institute of Electrical Technology&Material Engineering,Zhuzhou,Hunan 412001,China)
出处
《机车电传动》
北大核心
2020年第1期34-37,48,共5页
Electric Drive for Locomotives
基金
国家重点研发计划项目(2017YFB1200902)。
关键词
3300
V全SiC
MOSFET
开关特性
驱动电阻
结温
杂散电感
3300 V full SiC MOSFET
switching characteristics
gate drive resistors
junction temperature
stray inductance
