摘要
介绍了SiC MOSFET器件应用所具有的技术优势,并从理想耐压与导通电阻理论入手,确定了漂移层耐压结构的优化设计;综合考量阈值电压、氧化层电场集中和导通电阻特性,确定了芯片元胞各关键区域的优化设计;最后,从导通电阻优化、更高电压等级芯片研制和单片集成续流二极管3方面,阐述了SiC MOSFET芯片未来的技术发展趋势。
It introduced the application advantages of SiC MOSFET and determined an optimized design of drift layer structure based on the theory of ideal blocking characteristics and on-state resistance.Afterwards,the design of key structures in cell was optimized in consideration of threshold voltage,oxide electric field crowding and on-state resistance.Finally,the development trend of SiC MOSFET chip was expounded from the aspects of on-resistance optimization,higher voltage grade chip development and monolithic integrated freewheeling diode.
出处
《大功率变流技术》
2017年第1期33-38,共6页
HIGH POWER CONVERTER TECHNOLOGY
关键词
SIC
MOSFET
阻断特性
导通电阻
阈值电压
结构参数
SiC MOSFET
blocking characteristics
on-state resistance
threshold voltage
structure parameter
