摘要
State-of-the-art AlGaN/GaN high electron mobility structures were grown on semi-insulating 4H-SiC substrates by MOCVD and X-band microwave power high electron mobility transistors were fabricated and characterized.Hall mobility of 2291.1 cm^(2)/(V·s)and two-dimensional electron gas density of 9.954×10^(12)cm^(-2)were achieved at 300 K.The HEMT devices with a 0.45-μm gate length exhibited maximum drain current density as high as 1039.6 mA/mm and peak extrinsic transconductance of 229.7 mS/mm.The f_(T)of 30.89 GHz and f_(max)of 38.71 GHz were measured on the device.Load-pull measurements were performed and analyzed under(-3.5,28)V,(-3.5,34)V and(-3.5,40)V gate/drain direct current bias in class-AB,respectively.The uncooled device showed high linear power gain of 17.04 dB and high power-added efficiency of 50.56%at 8 GHz when drain biased at(-3.5,28)V.In addition,when drain biased at(-3.5,40)V,the device exhibited a saturation output power dens-ity up to 6.21 W/mm at 8 GHz,with a power gain of 11.94 dB and a power-added efficiency of 39.56%.Furthermore,the low f_(max)/f_(T)ratio and the variation of the power sweep of the device at 8 GHz with drain bias voltage were analyzed.
基金
supported by the National Key Research and Development Program of China(2017YFB0402900)
the Key-Area Research and Development Program of Guangdong Province(2019B010126001)
the Natural Science Foundation for Distinguished Young Scholars of Shandong Province(ZR2019JQ01)
the National Natural Sciences Foundation of China(62074144,52022052,62004118)
Key R&D plan of Shandong Province(2019JMRH0901,2019JMRH0201)
the Natural Science Foundation of Shandong Province(ZR2019BEM030,ZR2019BEM011).
