摘要
Fabrication of enhancement-mode high electron mobility transistors on AlGaN/GaN heterostructures grown on sapphire substrates is reported. These devices with 1.2μm gate-length,4mm space between source and drain,and 15nm recessed-gate depth exhibit a maximum drain current of 332mA/mm at 3V, a maximum transconductance of 221mS/mm, a threshold voltage of 0.57V, ft of 5.2GHz, and fmax of 9.3GHz. A dielectric layer formed unintentionally during recessedgate etching is confirmed by contrasting the Schottky I-V characteristics of pre-etching and post-etching. The frequency characteristics and subthreshold characteristics of the devices are studied in detail.
成功研制出蓝宝石衬底的槽栅增强型AlGaN/GaN HEMT.栅长1.2μm,源漏间距4μm,槽深15nm的器件在3V栅压下饱和电流达到332mA/mm,最大跨导为221mS/mm,阈值电压为0.57V,ft和fmax分别为5.2和9.3GHz.比较刻蚀前后的肖特基I-V特性,证实了槽栅刻蚀过程中非有意淀积介质层的存在.深入研究了增强型器件亚阈特性和频率特性.
基金
the Key Programof the National Natural Science Foundation of China(No.60736033)~~
