摘要
使用金属有机物化学气相外延(MOCVD)技术在50mm半绝缘6H-SiC衬底上生长了AlGaN/GaN高电子迁移率晶体管(HEMT)材料。50mmHEMT外延片平均方块电阻为305.3Ω/□,不均匀性为3.85%。使用此材料研制的单管2mm栅宽HEMT,其饱和漏极电流为1.36A/mm,跨导为460mS/mm。利用内匹配技术对两个2mm栅宽器件进行了合成,输入信号频率8GHz,脉冲下输出功率为34.1W,功率增益为6.1dB,功率附加效率为37.3%。
Optimized AlGaN/AlN/GaN high electron mobility transistor(HEMT)with high mobility GaN channel layer structure was grown on 50 mm diameter semi-insulating 6H-SiC substrate by MOCVD.The 50 mm HEMT wafer exhibites a low average sheet resistance of 305.3 Ω/□,with the resistance uniformity of 3.85%.For the single-cell HEMT device of 2 mm gate width fabricated using the materials,a maximum drain current density is 1.36 A/mm and an extrinsic transconductance is 460 mS/mm.The two-cell internally-matches GaN HEMT with 4 mm total gate width demonstrates a very high output power of 34.1 W at 8 GHz under the pulse condition,with a power added efficiency of 37.3% and power gain of 6.1 dB.
出处
《半导体技术》
CAS
CSCD
北大核心
2008年第S1期202-205,共4页
Semiconductor Technology
基金
国家自然科学基金(60576046
60606002)
国家"973"重点基础研究项目(2006CB604905
613270805)
中国科学院知识创新工程目(YYYJ-0701-02)
