摘要
This letter showcases the successful fabrication of an enhancement-mode(E-mode)buried p-channel GaN fieldeffect-transistor on a standard p-GaN/AlGaN/GaN-on-Si power HEMT substrate.The transistor exhibits a threshold voltage(VTH)of−3.8 V,a maximum ON-state current(ION)of 1.12 mA/mm,and an impressive ION/IOFF ratio of 10^(7).To achieve these remarkable results,an H plasma treatment was strategically applied to the gated p-GaN region,where a relatively thick GaN layer(i.e.,70 nm)was kept intact without aggressive gate recess.Through this treatment,the top portion of the GaN layer was converted to be hole-free,leaving only the bottom portion p-type and spatially separated from the etched GaN surface and gateoxide/GaN interface.This approach allows for E-mode operation while retaining high-quality p-channel characteristics.
基金
supported by the Youth Innovation Promotion Association of the Chinese Academy of Sciences(Grant No.2020321)
the National Natural Science Foundation of China(Grant No.92163204).
