摘要
随着半导体产业的技术发展与进步,芯片制造在摩尔定律的推动下也在不断向先进工艺节点推进。与此同时,我们迫切需要开发与之相匹配的光刻材料来满足光刻图形化的快速发展需求。本文从光刻材料的成分和性能出发,介绍了光刻图形化技术所用的从紫外光刻胶、深紫外光刻胶、极紫外光胶、共轭聚合物光刻材料到导向自组装光刻材料,分析了光刻材料的发展现状,最后总结全文并对国内光刻材料的未来发展趋势进行展望。
With the technological development and progresses of the semiconductor industry,chip manufacturing is stepping forward to the advanced technology nodes under the impetus of Moore’s Law.Meanwhile,the corresponding advanced materials for lithography are highly desired to satisfy the rapid development of advanced lithographic patterning.This review focuses on the composition and performances of materials for lithography.The photoresist from ultraviolet,deep ultraviolet,and extreme ultraviolet light as well as semiconducting photoresist and materials for directed self-assembly (DSA) are systematically summarized.Subsequently,the current market development and requirement of materials for lithography are critically examined.Finally,after a brief summary,an outlook for the prospective studies on advanced materials for lithography and the corresponding solutions to improve the domestic market occupancy is provided.
作者
李自力
徐兴冉
湛江浩
胡晓华
张子英
熊诗圣
LI Zi-Li;XU Xing-Ran;ZHAN Jiang-Hao;HU Xiao-Hua;ZHANG Zi-Ying;XIONG Shi-Sheng(Center of Micro-Nano System,School of Information Science and Technology,Fudan University,Shanghai 200438,China;School of Materials Engineering,Shanghai University of Engineering Science,Shanghai 201620,China)
出处
《应用化学》
CAS
CSCD
北大核心
2022年第6期859-870,共12页
Chinese Journal of Applied Chemistry
基金
国家自然科学基金(Nos.U20A20227,61974030)
复旦大学科研启动项目(No.JIH1232090)资助。
关键词
先进光刻技术
导向自组装光刻
光刻胶
共轭聚合物光刻材料
化学放大胶
Advanced lithography
Directed self-assembly lithography
Photoresist
Semiconductingphotoresist
Chemically amplified photoresists
