摘要
从主体树脂的结构设计、单体的合成工艺、主体树脂的合成工艺、光致产酸剂的评价、配方研究等多个方面论述了193nm光刻胶的研制工艺,合成出了多种适用的单体及多种结构的主体树脂,进行了大量的配方研究,筛选出了最佳配方.研制出的样品经美国SEMATECH实验室应用评价其最佳分辨率为0.1μm,最小曝光量为26mJ/cm2,不但具有优异的分辨率和光敏性,而且还具有良好的粘附性和抗干法腐蚀性.
This paper discuss the preparation technology of 193 nm photoresist from the structure design of matrix polymer,the synthetic technology of monomer and of matrix polymer, the evaluation of photo-acid generator and prescription research. Various suitable monomers and various structural matrix polymers were synthesized, a plenty of formulation research was carried out and the best formulation was sieved. The photoresist sample prepared was evaluated by SEMATECH. Its best resolution is 0.1 μm, the minimun exposure dose is 26 mJ/cm2;it has not only excellent resolution and photosensitivity,but also good adhesiveness and anti-dry etching.
出处
《感光科学与光化学》
CSCD
2005年第4期300-311,共12页
Photographic Science and Photochemistry
基金
国家863项目(2002AA3Z1330).
