摘要
光致抗蚀剂,又称光刻胶,是微电子工业中制作大规模和超大规模集成电路不可或缺的核心材料,因其在国民经济和国防建设中具有战略地位而备受研究者关注。本文梳理了光致抗蚀剂从早期的聚乙烯醇肉桂酸酯、环化橡胶-叠氮化合物、近紫外G线(436-nm)和I线(365-nm)酚醛树脂-重氮萘醌类光致抗蚀剂,到深紫外(248-nm和193-nm)、真空紫外(157-nm)光致抗蚀剂,再到极紫外(13.5-nm)、电子束、纳米压印、嵌段共聚物自组装、扫描探针等下一代光刻技术用光致抗蚀剂的发展脉络,综述了其研究进展。重点对深紫外化学增幅型光致抗蚀剂体系进行了总结,包括主体成膜树脂、光产酸剂以及溶解抑制剂、碱性化合物等添加剂,并介绍了下一代光刻技术用光致抗蚀剂的最新研究成果。最后对光致抗蚀剂未来的发展前景和方向进行了展望。
Photoresist is the indispensable and key material used for fabricating large-scale and super-large-scale integrated circuits in microelectronic industry. Due to its strategic role in the construction of national economy and national defense,photoresist has aroused great attention of researchers. Since the birth of the first integrated circuit board in 1959,photoresist has gradually evolved from the resists used for traditional ultraviolet（ UV）photolithography,including early polyvinyl cinnamate,cyclized rubber / azide system,near-UV（436-nm G-line and 365-nm I-line） novolac / diazonaphthoquinone photoresists,deep-UV（ DUV,248-nm and 193-nm） and vacuum-UV（157-nm） photoresists,to the resists used for the so-called next generation lithography（ NGL）,such as extreme-UV lithography（ EUVL）,electron-beam lithography（ EBL）,nanoimprint lithography（ NIL）,block copolymer lithography（ BCL）,and scanning probe lithography（ SPL）. In this review,the above evolution of photoresist and its research progress are summarized based on a large amount of literature.Thereinto,DUV chemically amplified photoresists are focused,including matrix resins,photoacid generators,and additives（ for example,dissolution inhibitors and basic compounds）. In addition,the recent research achievements of the resists for EUVL,EBL,NIL,BCL,and SPL are also highlighted. Finally,the prospect and research directions of photoresist in the future are briefly discussed.
出处
《化学进展》
SCIE
CAS
CSCD
北大核心
2014年第11期1867-1888,共22页
Progress in Chemistry
基金
国家重大科技专项(No.2010ZX02304)资助~~
