摘要
光致抗蚀剂(photoresist)是制造超大规模集成电路的关键性材料之一,随着集成电路集成度的不断增加,光致抗蚀剂由g线(436nm)胶、i线(365nm)胶,逐渐发展到深紫外(DUV)(248nmKrF与193 nm ArF)胶。成膜树脂作为光致抗蚀剂的主要成分之一,决定了抗蚀剂的主要性能,因此研究成膜树脂具有重要的意义。本文综述了248 nm KrF光致抗蚀剂成膜树脂的研究进展,重点介绍了聚对羟基苯乙烯及其衍生物,并简要介绍了其合成方法及成像机理。
Photoresist is one of the best important materials for ULSI. It has been developed from g-line and i-line photoresist to DUV photoresist with the progress of ULSI. Matrix resin is one of the components of photoresist, which therefore has the greatest effect on resist performance. So it is important to research the matrix resins. This paper describes the development of the 248 nm photoresist in aspects of matrix resins. Especially, poly （p-hydroxystyrene） is emphatically described.
出处
《信息记录材料》
2008年第2期37-43,共7页
Information Recording Materials
基金
北京印刷学院印刷包装材料与技术北京市重点实验室开放基金(KF060101)
