摘要
介绍了Au-In键合在MEMS芯片封装中的应用。根据现有的工艺设备和实验条件对制备铟凸点阵列进行了工艺设计,对铟凸点制备技术进行了研究,最终在硅圆片上制备了6μm高的铟凸点阵列。在150～300℃下成功的进行了Au-In倒装键合实验。在300℃,0.3 MPa压力下键合的剪切强度达到了5 MPa。
The application of Au-In bonding for MEMS package was introduced.According to the Equipment and the experiment condition,we designed the process of indium bump arrays,and researched the fabrication of indium film and technology of indium bumps.Finally 6 μm-high indium bump arrays were fabricated on the wafer successfully.Au-In Flip-Cip bonding experiments have been conducted at the temperature 150～300 ℃.The die shear strength is 5MPa with 300 ℃ and 0.3 MPa bonding stress.
出处
《电子器件》
CAS
2010年第3期258-261,共4页
Chinese Journal of Electron Devices
基金
国家863计划资助项目(2007AA04Z306)
江苏省青蓝工程资助项目
航空基金资助项目(20080869011)
