摘要
随着红外焦平面探测器面阵规模的不断扩大,大面阵碲镉汞芯片的热应力进一步恶化,受温度冲击后更容易产生损伤,进而直接影响探测器的使用,甚至导致探测器失效。这已成为大面阵探测器生产工艺亟需解决的问题。借助仿真手段研究了大面阵碲镉汞芯片的低温损伤原因,并结合小面阵探测器进行了对比分析。结果表明,铟柱与碲镉汞接触边缘部位因应力集中明显而成为损伤的起源点。不同材料的选择以及结构尺寸的设计有助于降低大面阵碲镉汞芯片的热应力和提高其工作可靠性。
With the continuous expansion of the array scale of infrared focal plane detectors,the thermal stress of large array HgCdTe chips becomes worse.The damage is prone to occur after temperature shock,which will directly affect the use of the detectors,and even lead to the failure of the detectors.This has become an urgent problem to be solved in the production process of large array detectors.In this paper,the damage reason of large array HgCdTe chips at low temperature is studied by means of simulation,and the comparison analysis is made with small array detectors.The results show that the stress concentration locates at the edge of indium column and HgCdTe,which is the origin of the damage.The selection of different materials and the design of the structure sizes are helpful to reduce the thermal stress and improve the reliability of large array HgCdTe chips.
作者
付志凯
李雪梨
张磊
吴卿
王成刚
FU Zhi-kai;LI Xue-li;ZHANG Lei;WU Qing;WANG Cheng-gang(North China Research Institute of Electro-Optics,Beijing 100015,China)
出处
《红外》
CAS
2021年第4期25-29,共5页
Infrared
关键词
红外探测器
大面阵探测器
热应力
infrared detector
large array detector
thermal stress
