摘要
液氮冲击中锑化铟(InSb)芯片的断裂现象制约着InSb红外焦平面探测器(IRFPAs)的成品率。在台面结光敏元阵列中,光敏元之间的隔离槽可能会引起应力集中,驱使InSb芯片中的位错线成核、扩展,导致InSb芯片断裂。为定量分析隔离槽对InSb芯片断裂的影响,建立了InSb IRFPAs结构分析模型,剖析了隔离槽结构的引入对InSb芯片前表面应力分布的影响,发现V型隔离槽槽底是应力集中点;随后在V型隔离槽底预置不同长度的初始裂纹以描述位错线的长短,得到能量释放率随预置裂纹长度之间的关系。经分析后认为:隔离槽确能引起InSb芯片中面内正应力在槽底处产生应力集中;该区域的应力集中有利于InSb芯片中位错线增长,贯穿InSb芯片,导致InSb芯片发生断裂;此外,与V型槽底重合的预置裂纹更易引起InSb芯片发生断裂。这些结论能够为分析InSb芯片的断裂提供新的视角。
Local cleavage of indium antimonide(InSb)chips restricts the improvement of the yield of InSb infrared focal plane detectors(IRFPAs)under cyclic liquid nitrogen shocking tests.Stress concentration effect may appear in isolation troughs surrounding mesa-junction photosensitive units,drives the dislocation line to nucleate and to propagate,ultimately to punch through InSb chips.In order to analyze quantitatively the influence of isolation troughs on the cleavage of the InSb chip,a structural model of InSb IRFPAs was established,and the in-plane normal stress distribution on the InSb front surface was obtained.Stress concentration phenomena appear on the bottom of V-shaped isolation trough added.Then,the assumed initial cracks with different lengths at the bottom of V-shaped isolation trough were put,here the preset initial cracks were employed to describe dislocation lines in InSb wafers,and were perpendicular to the InSb chips,and obtained the relationship between the energy release rates and the preset crack length.After analyzing these results,the in-plane stress concentration phenomena appears exactly at the bottom of V-shaped isolation trough,and originates from the added V-shaped isolation trough;the enlarged stress at the bottom of V-shaped isolation trough could drive the dislocation lines in the InSb chip to grow and to punch through the InSb chip,thus,the macro cleavage of InSb chip is created;once the preset cracks connect directly with the bottom of V-shaped isolation trough,cleavage of InSb chips is more likely to appear.All these conclusions provide a new perspective to understand the cleavage of InSb chips.
作者
田笑含
张江风
张晓玲
孟庆端
Tian Xiaohan;Zhang Jiangfeng;Zhang Xiaoling;Meng Qingduan(School of Electrical Engineering,Henan University of Science and Technology,Luoyang 471023,China;School of Software,Henan University of Science and Technology,Luoyang 471023,China)
出处
《红外与激光工程》
EI
CSCD
北大核心
2022年第5期401-405,共5页
Infrared and Laser Engineering
基金
国家自然科学基金青年科学基金(61505048)
河南省高等学校重点科研项目(19A510012)
河南省自然科学基金(202300410157)。
关键词
锑化铟探测器
隔离槽
应力
能量释放率
芯片断裂
InSb detector
isolation trough
stress
energy release rate
chip cleavage
