摘要
设计并制备了典型电容式射频微机电系统(RF MEMS)开关结构,利用纳秒脉冲微间隙击穿的电气测试和光学诊断系统,对上、下电极间隙宽度在45~100μm的电容式RF MEMS开关的击穿及损伤特性进行了研究。结果表明:上、下电极间隙宽度为45~100μm时,典型电容式RF MEMS开关击穿属于空气-氮化硅双层介质击穿,且随着间隙增大击穿电压变化不明显;击穿点主要集中在上电极悬浮铝桥上,Al桥形貌损伤十分严重,而其他部位损伤较小。
A typical capacitive RF MEMS switch structure is designed and fabricated.The breakdown and damage characteristics of the capacitive RF MEMS switches with gaps spacing between 45μm and 100μm are investigated by employing a home-built electrical measurement equipment and an optical diagnostic system.The results show that the breakdown occurs on the air-silicon nitride double-layer,and change of breakdown voltage is not obvious with the increase of the gap spacing.The breakdown mainly locates at the upper suspended aluminum bridge electrode of the RF MEMS switch structure.The physical damage of the aluminum bridge is very serious while the other parts are less damaged.
作者
王科镜
李南
陈先龙
应琪
成永红
孟国栋
WANG Ke-jing;LI Nan;CHEN Xian-long;YING Qi;CHENG Yong-hong;MENG Guo-dong(State Key Laboratory of Electrical Insulation and Power Equipment,Xi'an Jiaotong University,Xi'an 710049,China;Northwest Institute of Nuclear Technology,Xi'an 710024,China;State Key Laboratory of Intense Pulsed Radiation Simulation and Effect,Xi'an 710024,China)
出处
《现代应用物理》
2019年第1期32-37,共6页
Modern Applied Physics
基金
国家自然科学基金资助项目(51607138)
强脉冲辐射环境模拟与效应国家重点实验室开放基金资助项目(SKLIPR.1512)
