摘要
本文研究由国产DD-P 250型等离子淀积设备制备的氮化硅膜的性质与膜的生长条件的关系.俄歇分析的估算表明膜的组份在纵向分布均匀,含氧量均较低(3%以下),任何使Si/N比增大的生长条件均会使固定界面正电荷增加,固定界面正电荷密度与陷阱密度均在10^(12)/cm^2量级,膜的导电机理显示Poole-Frenkel发射,当Si/N比为1.25～0.81时,膜的击穿场强为3.0～8.5MV/cm.
PECVD silicon nitride films are produced with Chinese-built DD-P250 type plasma deposition equipment. The correlations between the properties of the films and their deposition conditions have been investigated. The compositions estimated by Auger analysis are found to be uniform in the film thickness. Oxygen content is low (less than 3%). Any deposition which makes Si/N ratio increase can make fixed interface positive charges increase. The densities of fixed positive charges in interface and the densities of traps have the same order of 1012/cm2. The conduction mode appears to. be of Poole-Frenkel emission. When the Si/N ratio ranges from 1.25 to 0.81, the breakdown strength ranges from 3.0 to 8.5 MV/cm.
出处
《杭州大学学报（自然科学版）》
CSCD
1990年第2期174-183,共10页
Journal of Hangzhou University Natural Science Edition
基金
国家自然科学基金
关键词
氮化硅
薄膜
PECVD
性质
生长条件
plasma-deposited silicon nitride
Si/N ratio
MNS structure
fixed interface positive charge
