摘要
实验研究了静态随机存储器(SRAM)的电磁脉冲效应,重点研究存储器容量不同、不同脉冲宽度脉冲场激励以及存储器读写状态与否等情况下的效应规律,实验场强在2.5至40 kV/m之间。实验结果表明,存储器处于读写状态即片选有效时其效应更为严重,存储器的翻转效应与存储容量大小、激励电磁脉冲的脉冲宽度关系不大,电磁脉冲的场强幅值是其主要的敏感参数。
The response of SRAM with different memory size at different read/write state was studied under EMP environment with pulse width of 50 ns、350 ns and 1μs.The electric field amplitude of EMP ranges from 2.5 to 40 kV/m.It was found that the upset number has no obvious relation with memory size of SRAM and band width of EMP.The electric field amplitude is the crucial parameter leading to the upset effects.Further more,the upset effects of SRAM at read write state was much more seriously compared to the SRAM was not at read/write state.
出处
《核电子学与探测技术》
CAS
CSCD
北大核心
2010年第11期1423-1426,共4页
Nuclear Electronics & Detection Technology
基金
国家自然科学基金项目(50707027)
