摘要
随着微电子技术的迅猛发展和半导体器件尺寸的大幅度缩小,ESD失效分析已经成为微电子器件可靠性领域中的研究热点之一.概述了作为西方发达国家的典型代表美国由于ESD所造成的危害十分严重,因此美国学者对微电子器件的ESD失效分析进行了广泛研究.介绍了美国在该领域所取得的研究成果及进展状况并与我国学者所做的研究作了比较.美国在这领域所取得的新成果、新技术、研究所采用的新方法等等对我国的科学工作者是很有借鉴意义的.
As the rapid development of micro-electron technology and the reducing of large scale semi-conductor devices,ESD failure analysis has become one of the hot spots in mirco-electron component reliable domain.America,as the most typical western developed country suffer very serious hazards of ESD.Therefor,American scholars have conducted comprehensive research on the ESD failure analysis of mirco-electron devices.Here,their research achivevments and development prospest are introduced.In addition,a comparision between the research achievement of American scholars and our country' also be made.The new qchievements,new technologies,new research motheds of American scholars are very helpful to us when we do research in the future.
出处
《河北大学学报（自然科学版）》
CAS
北大核心
2007年第S1期186-189,共4页
Journal of Hebei University(Natural Science Edition)
基金
国家自然科学基金资助项目(60471024)
关键词
ESD失效分析
失效机理
失效模式
失效分析技术
ESD failure analysis
failure mode
failure mechanism
failure analysis technology
