摘要
本文通过案例和实验,概述了四种IGBT及其子器件的失效模式:MOS栅击穿、IGBT-MOS阈值电压漂移、IGBT有限次连续短路脉冲冲击的积累损伤和静电保护用高压npn管的硅熔融。
This paper based on instance and experiment, the four failure modes in IGBT and it subdevices： MOS gate breakdown; IGBT--MOS threshold voltage shift; Cumulative damage of IGBT under repetitive short-circuits operation and Silicon melting of HV npn transistor for ESD Protection are summarized.
出处
《电力电子》
2006年第5期45-49,共5页
Power Electronics
关键词
栅击穿
阈值电压漂移
积累损伤
硅熔融
gate breakdown threshold voltage shift cumulative damage silicon melting
