摘要
量子点材料具有与尺寸相关的优异光学性能,如发光波长可谐调、发射半峰宽窄、激发范围宽等,应用领域广泛。然而目前主流的量子点普遍含有镉、铅等元素,不利于商业化产品发展。磷化铟(InP)量子点无重金属毒性,光谱范围可覆盖整个可见光区,具有与镉基量子点相媲美的发光和光电性能,逐渐得到关注。本文综述了近年来InP量子点的合成方法和应用方面的研究进展,首先探讨了热注入、加热、晶核生长、阳离子交换等InP量子点合成方法的优势与缺陷,然后重点介绍了目前InP量子点在照明显示、光伏、光催化和光学标记成像等领域取得的应用成果。最后,从材料合成和器件应用2个角度提出了InP量子点发展面临的挑战及可能的解决方案,以期推动InP量子点的研究和应用,为光电领域的发展提供新的思路。
Quantum dot materials have excellent optical properties related to size,such as tunable emission wave-length,narrow full width at half maximum,and wide excitation range,and have a wide range of applications.Howev-er,currently,mainstream quantum dots generally contain elements such as cadmium and lead,which is not condu-cive to the development of commercial products.Indium phosphide(InP)quantum dots have no heavy metal toxici-ty,and their spectral range can cover the entire visible light region.They have luminescence and optoelectronic properties comparable to cadmium-based quantum dots and are gradually gaining attention.This article reviews the progress of research in the synthesis methods and applications of InP quantum dots in recent years.Firstly,the advantages and disadvantages of InP quantum dot synthesis methods such as hot injection,heating,crystal nucleus growth,and cation exchange are discussed.Then,the current application achievements of InP quantum dots in fields such as illumination display,photovoltaics,photocatalysis,and optical labeling imaging are highlighted.Finally,the challenges and possible solutions for the development of InP quantum dots are proposed from the perspectives of material synthesis and device applications,to promote the research and application of InP quantum dots and provide new ideas for the development of the optoelectronic field.
作者
苏雨
范新莲
殷垚
王琳
SU Yu;FAN Xinlian;YIN Yao;WANG Lin(Key Laboratory of Flexible Electronics,School of Flexible Electronics(Future Technology),Nanjing Tech University,Nanjing 211816,China)
出处
《无机化学学报》
SCIE
CAS
CSCD
北大核心
2024年第11期2105-2123,共19页
Chinese Journal of Inorganic Chemistry
基金
国家重点研发计划(No.2022YFB3602801)资助。
关键词
量子点
磷化铟
合成设计
光电器件
荧光探针
quantum dot
indium phosphide
synthesis design
optoelectronic device
fluorescent probe
