摘要
Van der Waals(vdW)heterojunctions,with their unique electronic and optoelectronic properties,have become promising candidates for photodetector applications.Amplifying the contribution of the depletion region in vdW heterojunction,which would enhance both of the collection efficiency and speed of the photogenerated carriers,presents an effective strategy for achieving high performance vdW heterojunction photodetectors.Herein,a fully depleted vdW heterojunction photodetector is built on two-dimensional(2D)semiconductor materials(GaTe and InSe)layered on a pattered bottom electrode in vertical structure,in which the generation and motion of carriers are exclusively achieved in the depletion region.Attributed to the intrinsic built-in electric field,the elimination of series resistance and the depletion region confinement of carriers,the as-fabricated photodetector exhibits prominent photovoltaic properties with a high open-circuit voltage of 0.465 V,as well as photoresponse characteristics with outstanding responsivity,detectivity and photoresponse speed of 63.7 A/W,3.88×10^(13)Jones,and 32.7 ms respectively.The overall performance of this fully depleted GaTe/InSe vdW heterojunctions photodetectors are ranking high among the top level of 2D materials based photodetectors.It indicates the device architecture can provide new opportunities for the fabrication of high-performance photodetectors.
基金
supported by the State Key Research Development Program of China(Grant No.2019YFB2203503)
National Natural Science Fund(Grant Nos.61875138,61961136001,62104153,62105211 and U1801254)
Natural Science Foundation of Guangdong Province(2018B030306038 and 2020A1515110373)
Science and Technology Projects in Guangzhou(no.202201000002)
Science and Technology Innovation Commission of Shenzhen(JCYJ20180507182047316 and 20200805132016001)
Natural Science Foundation of Jilin Province(Grant No.YDZJ202201ZYTS429)。
