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MMC-HVDC系统功率器件的结温估算研究 被引量:2

Research on Junction Temperature Estimation of Power Devices in MMC-HVDC System
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摘要 柔性直流输电系统采用模块化多电平结构,包含数量庞大的半桥功率模块,此处提出了一种功率模块器件的损耗与结温估算方法。首先研究了半桥功率模块的功率损耗计算方法,并根据功率模块内含绝缘栅双极型晶体管(IGBT)、二极管、散热器的布局,建立功率器件级的热阻模型。然后,由于IGBT为密封器件,无法直接测量器件内部温度,通过测量与之压接相连散热器的表面壳温来间接推导器件结温。最后,开展了功率模块的加载实验工作,所述结温估算方法的仿真与实验结果基本一致。 The flexible DC electric power transmission uses a modular multilevel structure with a large number of half bridge power modules.A power loss and junction temperature estimation method for power module devices is proposed.Firstly,the power loss calculation method of half bridge power module is studied,and the thermal resistance models of power device are established according to the layout of insulated gate bipolar transistor(IGBT),diode and radiator in power module.Then,because IGBT is a sealed device and the internal temperature of the device can not be measured directly,the junction temperature of the device is deduced indirectly by measuring the surface shell temperature of the radiator connected to it.Finally,the loading experiments of power modules are carried out,and the simulation results of the method are basically consistent with the test results.
作者 周竞宇 赵宇 胡雨龙 任成林 ZHOU Jing-yu;ZHAO Yu;HU Yu-long;REN Cheng-lin(l.CSG EHV Power Transmission Company,Guangzhou 510000,China;不详)
出处 《电力电子技术》 CSCD 北大核心 2021年第11期133-136,140,共5页 Power Electronics
基金 南方电网公司科技项目(2200000049811)。
关键词 晶体管 模块化多电平 半桥功率模块 损耗 结温 transistor modular multilevel half bridge power module power loss junction temperature
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