摘要
压接式IGBT作为换流阀的关键部件被广泛用于柔性直流输电,其可靠性直接影响电力装备和输电系统的安全稳定运行。针对器件寄生参数、多场耦合和制造工艺等因素产生的内部参数分布不均,进而影响器件可靠性的问题,文中提出利用单芯片压接式器件并联等效的方法来探究不同加载条件下多芯片器件内部压力、温度不均对电流分布的影响规律,并建立多芯片压接式IGBT器件电流分布计算模型。在详细分析温度、压力对器件内部电流分布影响机制的基础上,建立多芯片并联器件模拟平台,研究温度、压力分布不均程度对电流分布的影响。根据结温热敏参数的线性关系及压力对接触电阻的影响,建立多芯片并联压接式IGBT器件的电流分布计算模型,并通过试验和3300V/1500A器件多物理场耦合仿真模型验证电流分布计算模型有效性,为压接式IGBT的结构及封装优化、状态监测和寿命预测提供理论和技术支撑。
Press-pack insulated gate bipolar transistor(IGBT) is a key component of the converter valves and is widely used in HVDC transmission, whose reliability directly affects the safe and stable operation of power equipment and transmission system. The internal parameters are unevenly distributed due to multi-field coupling, parasitic parameters and manufacturing process, which affects the reliability of the device. In this paper, a method was proposed to simulate the influence of pressure and temperature on current distribution in the multi-chip devices by using two single-chip modules in parallel connection, and a current distribution calculation model of multi-chip IGBT device was established. Based on the detailed analysis of the effect mechanism of temperature and pressure on inside current distribution, a multi-chip parallel device simulation platform was established to study the influence of uneven temperature and pressure distribution on current distribution. According to the linear relationship of temperature sensitive electrical parameter and the influence of pressure on contact resistance, the current distribution calculation model of multi-chip press-pack IGBT modules was established, which is validated by using experiments and multiple physical field coupling model of the 3300 V/1500 A module. The intended outcome of this paper will lay scientific and technological foundation for health management of the converter and improving reliability of power modules and lifetime modeling.
作者
邓真宇
陈民铀
赖伟
李辉
王晓
罗丹
夏宏鉴
DENG Zhenyu;CHEN Minyou;LAI Wei;LI Hui;WANG Xiao;LUO Dan;XIA Hongjian(State Key Laboratory of Power Transmission Equipment&System Security and New Technology(School of Electrical Engineering,Chongqing University),Shapingba District,Chongqing 400044,China)
出处
《中国电机工程学报》
EI
CSCD
北大核心
2020年第23期7699-7709,共11页
Proceedings of the CSEE
基金
国家自然科学基金–智能电网联合基金重点项目(U1966213)
中央高校基本科研业务费(2020CDJQY-A026)。
关键词
压接式IGBT
电流分布
温度分布
多芯片器件
电热耦合计算
press-pack IGBT
current distribution
temperature distribution
multichip device
thermal-electric coupled field calculation
