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基于分立器件并联型碳化硅逆变器的叠层母排设计研究 被引量:1

Research on the Design of Laminated Busbar Based on Discrete Devices in Parallel to the Silicon Carbide Inverter
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摘要 在分立器件并联型碳化硅逆变器中,主功率回路叠层母排的设计需满足低寄生电感、外电路对称及器件均温的目标。然而,现有叠层母排的结构方案大多针对的是功率模块,对于分立器件并联型叠层母排缺乏系统性的设计方法。首先以两管并联为例,展示分立器件并联型叠层母排的三维结构特征。接着提出一种分立器件并联型叠层母排寄生电感建模以及解耦计算方法,为评估并联支路寄生电感大小和对称性提供依据。最终基于Ansys Q3D的参数化仿真分析,对不同器件布局以及关键物理尺寸进行寻优,总结出分立器件并联型叠层母排的设计原则。基于上述方法,设计出一种六管并联型叠层母排结构,通过仿真和实验验证了该结构满足低感,外电路对称以及器件均温的设计目标。 For the silicon carbide(SiC)inverters based on the solution of discrete devices in parallel,the laminated busbar needs to meet the design objectives of low parasitic inductance,external circuit symmetry,and device temperature balance.However,most of the existing design solutions for the busbar are aimed at the power module,and there is a lack of a systematic design approach for the busbar with the discrete devices in parallel.Firstly,the three-dimensional structural characteristic of the laminated busbar was presented taking the parallel connection of two devices as an example.Then,a modeling and decoupling method for the parasitic inductance was proposed to provide a basis for evaluating the value and symmetry of the parasitic inductance.Finally,by using the parametric simulation of Ansys Q3D,the different device layouts and key physical dimensions were optimized,and some design principles were concluded.Based on the above methods,a laminated busbar with six devices in parallel was designed.The final simulated and experimental results verify that the busbar meets the objectives of low parasitic inductance,symmetry of the external circuit,and device temperature balance.
作者 於少林 张兴 王佳宁 吴馥晨 王琛 刘元剑 YU Shaolin;ZHANG Xing;WANG Jianing;WU Fuchen;WANG Chen;LIU Yuanjian(School of Electrical Engineering and Automation,Hefei University of Technology,Hefei 230009,Anhui Province,China)
出处 《中国电机工程学报》 EI CSCD 北大核心 2022年第10期3738-3750,共13页 Proceedings of the CSEE
基金 国家自然科学基金面上项目(52077051) 合肥综合性国家科学中心能源研究院重点培育项目(21KZS203) 高等学校创新引智计划(BP0719039).
关键词 碳化硅逆变器 分立器件 并联型 叠层母排 寄生电感 silicon carbide(SiC)inverters discrete devices in parallel the laminated busbar parasitic inductances
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