摘要
采用滞回比较的思想,设计了一种芯片过温保护电路(OTP)。OTP电路中利用三极管的负温度特性实现对温度的检测,通过仿真确定两个阈值电压,比较器输出接反相器实现高低阈值的切换,设计低温漂带隙基准电路,输出两个参考电压,实现无热振荡的温度保护。基于TSMC 0.18μm工艺库,利用cadence spectre进行仿真,结果表明,TT工艺角下,基准电路温漂系数约为15×10-6/℃,温度在达到150℃附近时,比较器输出由高电平转为低电平,芯片停止工作,在温度降低至112.4℃附近时,输出翻转为高电平,芯片正常工作,温度迟滞量为37.6℃。该电路在不同工艺角下均满足设计要求,通过与芯片中带隙基准模块相结合的方式,简化了电路,具有较好的稳定性。
Using the idea of hysteresis comparison, a chip over-temperature protection(OTP) circuit is designed. In the OTP circuit, the negative temperature characteristics of the transistor are used to detect the temperature. Two threshold voltages are determined by simulation. The output of the comparator is connected to the inverter to switch between high and low thresholds. The low-temperature drift bandgap reference circuit is designed to output two reference voltages. Realize temperature protection without thermal oscillation. Based on the TSMC 0.18 μm process library and using cadence spectre for simulation, the results show that under the TT process angle, the temperature drift coefficient of the reference circuit is about 15×10-6/℃. When the temperature reaches around 150℃, the comparator output turns from high to low. Level, the chip stops working. When the temperature drops to around 112.4°C, the output flips to a high level, the chip works normally, and the temperature hysteresis is 37.6°C. The circuit meets the design requirements under different process angles. By combining with the bandgap reference module in the chip, the circuit is simplified and has better stability.
作者
贾志超
赵丽
何兴霖
陈智康
Jia Zhichao;Zhao Li;He Xinglin;Chen Zhikang(Tianjin Key Laboratory of Information Sensing and Intelligent Control,Tianjin Vocational and Technical Normal University,Tianjin 300222,China)
出处
《国外电子测量技术》
北大核心
2021年第8期125-128,共4页
Foreign Electronic Measurement Technology
基金
国家重点研发计划(2017YFB0403802)项目资助。
关键词
过温保护
滞回比较
仿真
带隙基准
over-temperature protection
hysteresis comparison
simulation
power supply rejection ratio
