摘要
设计了一种基于Brokaw带隙基准结构下的高精度过温保护(OTP)电路。通过基准电路中两个三极管VBE的差值产生一个正温度系数的电压,将其看作一个正温度系数的传感器实现对温度变化的检测。该电路利用基准与电阻分压得到两个零温度系数的电压,通过二选一传输门改变比较器的阈值,实现具备温度迟滞效应的OTP电路系统。基于0.18μm BCD工艺,利用hspice软件进行模拟验证,结果表明,在典型工艺角下,当温度高于125℃时,电路输出高电平的控制信号,芯片停止工作;当温度低于92℃时,控制信号跳变回低电平,芯片正常工作,具有33℃的迟滞量。电源在3~5.5 V范围波动时,电路的温度保护阈值和迟滞量误差不超过0.06℃。
A high precision over-temperature protection(OTP)circuit based on the Brokaw bandgap reference structure is designed. Producing a positive temperature coefficient voltage by the difference between the two transistors VBE in the reference circuit, think of it as a positive temperature coefficient sensor to detect temperature changes. The circuit uses the reference and the resistor divider to obtain two zero temperature coefficient voltages, and the threshold of the comparator is changed by the second selection transmission gate to realize the OTP circuit system with temperature hysteresis effect. Based on 0.18 μm BCD process, using hspice software for simulation verification, the results show that under the typical process angle, when the temperature is higher than 125 ℃, the circuit outputs a high level control signal, and the chip stops working;When the temperature is lowered to 92 ℃, control signal jumps back to low level and the chip resumes normal operation with a hysteresis of 33 ℃. When the power supply voltage fluctuates between 3 V and 5.5 V, the temperature protection threshold and hysteresis error of the circuit do not exceed 0.06 ℃.
作者
陈锦涛
冯全源
Chen Jintao;Feng Quanyuan(Institute of Microelectronics,Southwest Jiaotong University,Chengdu 611756,China)
出处
《电子测量技术》
2019年第24期71-74,共4页
Electronic Measurement Technology
基金
国家自然科学基金重点项目(61531016、61831017)
四川省科技支撑计划重点项目(2018GZ0139、2018ZDZX0148)
四川省重大科技专项项目(2018GZDZX0001)资助。
关键词
过温保护
高精度
正温度系数
Brokaw带隙基准
传感器
BCD
over-temperature protection
high precision
positive temperature coefficient
Brokaw bandgap reference
sensor
BCD
