摘要
基于0.25μm GaAs增强/耗尽(E/D)型赝配高电子迁移率晶体管(PHEMT)工艺,设计并实现了一款集成了6 bit并行驱动器的数字衰减器单片微波集成电路(MMIC)。该衰减器采用T型衰减网络结构,不仅缩小了芯片面积,并且可实现较好的衰减精度和衰减附加相移。芯片在片测试结果表明,在-5 V电源电压下驱动器的静态电流为1.8 mA,响应速度为25 ns。在9~18 GHz频率范围内,衰减器芯片的插入损耗不大于3.6 dB,均方根衰减精度不大于0.7 dB,衰减附加相移为-2°~4°,输入电压驻波比(VSWR)不大于1.25∶1,输出VSWR不大于1.5∶1。芯片尺寸为1.6 mm×0.6 mm×0.1 mm。该电路具有响应速度快、功耗低、面积小、衰减附加相移小等优点,可广泛应用于通信设备和微波测量系统中。
A digital attenuator monolithic microwave integrated circuit(MMIC) integrated with a 6 bit parallel driver was designed and implemented based on the 0.25 μm GaAs enhancement/depletion(E/D) mode pseudomorphic high electron mobility transistor(PHEMT) process. The attenuator adopted a T-type attenuation network structure, which reduces the chip area and achieves better attenuation accuracy and attenuation additional phase shift. The test results on wafer show that under-5 V supply voltage the static current of the driver is 1.8 mA and the response speed is 25 ns. In the frequency range of 9-18 GHz, the attenuator chip achieves an insertion loss of no more than 3.6 dB, a root mean square attenuation accuracy of no more than 0.7 dB,an attenuation additional phase shift from-2°to 4°, an input voltage standing wave ratio(VSWR) of no more than 1.25∶1, and an output VSWR of no more than 1.5∶1. The attenuator chip size is 1.6 mm×0.6 mm×0.1 mm. The circuit has the advantages of fast response, low power consumption, small area, small attenuation additional phase shift, and can be widely used in communication equipment and microwave measurement systems.
作者
李富强
赵子润
魏洪涛
Li Fuqiang;Zhao Zirun;Wei Hongtao(The 13th Research Institute,CETC,Shijiazhuang 050051,China;Science and Technology on ASIC Laboratory,Shijiazhuang 050051,China)
出处
《半导体技术》
CAS
北大核心
2019年第8期612-616,共5页
Semiconductor Technology
