摘要
针对传统衰减器体积大、反应时间长、可靠性差等问题,提出了一种基于氮化钽薄膜电阻的MEMS衰减器。根据π型衰减网路理论计算得到各个电阻的阻值,并计算各个电阻的仿真尺寸。利用HFSS 15.0电磁波仿真软件对衰减器结构进行仿真计算并优化。通过修改磁控溅射参数制备稳定的氮化钽薄膜电阻,在此基础上制作MEMS衰减器。采用矢量网络分析仪和探针台进行衰减器射频性能测试。测试结果表明,在0.1~20GHz频率范围内,衰减器的回波损耗大于12.4dB,插入损耗小于2.1dB,衰减精度小于5dB。衰减器整体尺寸为2.2mm×1.2mm×1mm。
Aiming at the problems of large volume,long reaction time and poor reliability of traditional attenuators,a MEMS attenuator based on tantalum nitride thin film resistor was proposed.According to theπ-type attenuation network theory,the resistance value and the simulation size of each resistor were calculated.The attenuator structure was simulated and optimized through the HFSS 15.0electromagnetic wave simulation software.A stable tantalum nitride thin film resistor was made by modifying the magnetron sputtering parameters,and on this basis,the MEMS attenuator was fabricated.The RF performance of the attenuator was tested by vector network analyzer and probe station.The test results showed that the return loss of the attenuator was higher than 12.4dB,the insertion loss was less than 2.1dB,and the attenuation accuracy was less than 5dB at frequency range of 0.1~20GHz.The size of this attenuator was 2.2mm×1.2mm×1mm.
作者
朱光州
张世义
王俊强
吴倩楠
李孟委
王志斌
ZHU Guangzhou;ZHANG Shiyi;WANG Junqiang;WU Qiannan;LI Mengwei;WANG Zhibin(Nantong Institute of IntelligentOpto-Mechatronics,North University of China,Nantong,Jiangsu 226000,P.R.China;School of Instrument and Electronics,North University of China,Taiyuan 030051,P.R.China;Center for Microsystem Integration,North University of China,Taiyuan 030051,P.R.China;Academy for Advanced Interdisciplinary Research,North University of China,Taiyuan 030051,P.R.China;School of Science,North University of China,Taiyuan 030051,P.R.China)
出处
《微电子学》
CAS
北大核心
2021年第5期739-745,共7页
Microelectronics
基金
新品项目(2016NW0014)。
