摘要
设计了一款GaAs赝配高电子迁移率晶体管(PHEMT)单片微波集成正电压控制开关。该电路设计采用片上集成隔直电容,对传统负电压控制开关的拓扑结构进行改进。针对PHEMT开关低频(0.1 GHz)下1 dB压缩点输入功率(Pi(1 dB))陡降问题进行分析,提出了改进栅极输入阻抗的方法,有效提高了PHEMT开关低频下的Pi(1 dB)。采用中国电子科技集团公司第十三研究所0.25μm GaAs PHEMT工艺进行了仿真和流片,芯片的面积为1.0 mm×1.0 mm。测试结果表明,在频率为0.1~4 GHz内,插入损耗小于0.8 dB,隔离度大于42 dB,Pi(1 dB)大于15 dBm。控制电压为0 V/5 V。该款GaAs PHEMT微波单片集成正电压控制开关设计全部达到了预期性能,并实现了改善低频下的Pi(1 dB)的目标。
A GaAs pseudomorphic high electron mobility transistor(PHEMT)monolithic microwave integrated positive voltage controlled switch was designed.The on-chip integrated isolated capacitance was adopted to improve the topology structure of the traditional negative voltage controlled switch.Based on the analysis of the steep drop of the 1 dB compression point input power(Pi(1 dB))of the PHEMT switch at low frequency(0.1 GHz),a method to improve the gate input impedance was proposed,which effectively improved the low frequency Pi(1 dB)of the PHEMT switch.Using the 0.25μm GaAs PHEMT process of the 13th Research Institute of CETC,the SPDT switch MMIC was simulated and fabricated with an area of 1.0 mm×1.0 mm.The test results show that in the frequency range of 0.1-4 GHz,the insertion loss is less than 0.8 dB,the isolation is greater than 42 dB,the Pi(1 dB)is greater than 15 dBm.The controlling voltage is 0 V/5 V.The design of the GaAs PHEMT monolithic microwave positive voltage controlled switch achieves the desired performance and the goal of improving the low frequency Pi(1 dB).
作者
刘方罡
要志宏
Liu Fanggang;Yao Zhihong(The 13th Research Institute,CETC,Shijiazhuang 050051,China)
出处
《半导体技术》
CAS
北大核心
2019年第7期526-530,共5页
Semiconductor Technology
