摘要
采用GaAs pin二极管和低噪声GaAs赝配高电子迁移率晶体管(PHEMT)集成的一片式限幅低噪声放大器(LNA)工艺,设计并制备了一款Ka波段GaAs微波单片集成电路(MMIC)限幅LNA。为了在Ka波段实现大功率和低噪声的目标,采用限幅器和LNA一体化设计的思路,优化了限幅器的电路拓扑和pin二极管的结构。该LNA采用三级级联的电流复用拓扑结构。在片测试结果表明,限幅LNA在32~38 GHz频率范围内,噪声系数小于3. 1 dB,线性增益大于18 dB,芯片静态工作电流为20 m A;在70℃恒温条件下,能够承受脉冲功率为2 W(脉冲宽度4 ms,占空比30%);芯片尺寸为3. 3 mm×2. 0 mm×0. 07 mm。
A Ka-band GaAs microwave monolithic integrated circuit( MMIC) limiter low noise amplifier( LNA) was designed and fabricated by a technology that GaAs pin diode and GaAs PHEMT LNA were integrated together. To achieve the higher power and lower noise at Ka-band,the limiter topological structure and the pin diode structure were optimized by using the idea of integrated design of the limiter and the LNA. A three-stage cascaded current reuse topology structure was used in the proposed LNA. Onwafer measured results show that the fabricated limiter LNA working frequency bandwidth is 32-38 GHz,the noise figure is below 3. 1 dB,the small signal gain is higher than 18 dB,and the quiescent working current is 20 m A. The limiter LNA could withstand 2 W pulse power at the normal temperature of 70 ℃,with a pulse width of 4 ms and duty cycle of 30%. The size of the chip is 3. 3 mm×2. 0 mm×0. 07 mm.
作者
王磊
任健
刘飞飞
刘帅
Wang Lei;Ren Jian;Liu Feifei;Liu Shuai(The 13th Research Institute,CETC,Shijiazhuang 050051,China)
出处
《半导体技术》
CAS
CSCD
北大核心
2018年第12期893-897,共5页
Semiconductor Technology
