摘要
基于GaAs pHEMT工艺设计了一款2.3~2.7 GHz双模式低噪声射频接收前端全集成芯片。该接收前端芯片包含一个单刀双掷(SPDT)收发开关及一个带旁路功能的低噪声放大器。一方面,采用带源级电感负反馈的共源共栅结构实现了放大器模式,将SPDT开关作为放大器输入匹配网络的一部分,一体化优化设计获得最少元件及较高Q值的输入匹配网络,进而实现低噪声、高增益和良好的输入回波损耗匹配;另一方面,采用多组开关联合实现了旁路功能用于衰减高输入功率的射频信号。测试结果表明,在2.3~2.7 GHz的宽频带范围内,实现的接收前端芯片在LNA模式下的噪声系数可达到1.53~1.64 dB的较低水平,且增益在18.1~19.2 dB之间,在2.5 GHz时输入1 dB压缩点为-1.5 dBm;在旁路模式下,插入损耗在工作频段内维持在约6~7 dB的水平。
A fully-integrated dual-mode low-noise RF receiver front-end for the 2.3 GHz~2.7 GHz band was presented based on a GaAs pHEMT technology.The receiver front-end consists of a single-pole double-throw(SPDT)transmit-receive switch and a low-noise amplifier(LNA)with bypass mode.The cascode common-source structure with inductive degeneration topology is adopted to achieve the LNA.The SPDT switch is embedded into the input matching network as a concurrent design to realize high Q matching network with minimum components for low noise,high gain and superior input return loss matching.Concurrent design of multiple switches for Bypass function is utilized to attenuate the high input power transmissions.The measurement results show that the presented FEM exhibits low noise figure of 1.53~1.64 dB and gain of 18.1~19.2 dB for 2.3~2.7 GHz frequency range in the high-gain LNA mode.At 2.5 GHz,the tested input 1 dB compression point at 2.5 GHz is-1.5 dBm.The insertion loss in Bypass mode typically varies from 6 to 7 dB in the operation frequency bands.
作者
饶忠君
张志浩
章国豪
Rao Zhongjun;Zhang Zhihao;Zhang Guohao(School of Information,Guangdong University of Technology,Guangzhou 510006,China;Synergy Innovation Institute of GDUT,Heyuan,Heyuan 517000,China)
出处
《电子技术应用》
2021年第7期17-20,47,共5页
Application of Electronic Technique
基金
广东省重点领域研发计划项目(2018B010115001)
国家自然科学基金项目(61974035)
广东省“珠江人才计划”本土创新科研团队项目(2017BT01X168)。
