摘要
基于0.15μm的砷化镓(GaAs)pHEMT工艺设计了一款毫米波低噪声放大器MMIC芯片。该款低噪声放大器采用三级级联的拓扑结构。测试结果显示,工作频率范围覆盖26~30 GHz,可兼顾5G毫米波n257(26.5~29.5 GHz)频段,噪声系数在2.4~3.0 dB的水平,小信号增益在23~26 dB。
A millimeter-wave low noise amplifier MMIC chip is designed based on 0.15μm gallium arsenide(GaAs)pHEMT process.The low noise amplifier uses a three-stage cascade topology to optimize the noise and gain.The test results show that the working frequency range covers 26-30 GHz,which can take into account 5G millimeter wave n257(26.5-29.5 Hz)band,the noise coefficient is 2.4-3.0 dB,and the small signal gain is between 23-26 dB.
作者
张耀
苏进
Zhang Yao;Su Jin(School of Information Engineering,Guangdong University of Technology,Guangzhou 510006,China;China Railway Guangzhou Bureau Group Co.,Ltd.,Guangzhou Communication Section,Guangzhou 510000,China)
出处
《无线互联科技》
2021年第17期3-4,共2页
Wireless Internet Technology
