摘要
介绍了一种基于0.15μm GaAs pHEMT功率工艺的K波段收发一体多功能芯片。该多功能芯片包含了功率放大器和低噪声放大器及收发开关。接收支路19.6-23.0GHz内增益大于23dB,增益平坦度为±0.2dB,输入输出驻波均小于1.8,噪声低于3.5dB;发射支路21-23GHz内输出驻波小于2.2,输入驻波小于2,增益大于25.6dB。在22GHz时饱和输出功率为23.3dBm,饱和电流170mA,效率达到25.2%。该多功能芯片接收/发射由单刀双掷开关控制。芯片尺寸为：4.1mm×2.75mm×0.05mm。
A K-band transceiver monolithic microwave integrated multi-functional circuit has been successfully developed by using 0.15μm GaAs power pHEMT technology.The multifunctional MMIC contains a power amplifier（PA）,a low noise amplifier（LNA）and T/R switches.The receive channel works with the frequency ranging from 19.6GHz to 23 GHz and the gain is over 23 dB with the gain flatness of±0.2dB,the NF less than 3.5dB,input/output VSWRless than 1.8.The transcieve channel works with the frequency ranging from 21 GHz to 23 GHz and the VSWRoutis less than 2.2,the VSWRinless than 2,the gain over 25.6dB.Its Psatis up to23.3dBm when Isatis 170 mA,with the PAEreaching 25.2%.The total T/R MMIC is controlled by a SPDT switch.The fabricated multifunctional MMIC is only 4.1 mm×2.75 mm×0.05 mm.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2015年第1期40-45,共6页
Research & Progress of SSE
关键词
微波单片集成电路
K波段
负载牵引
收发多功能
microwave monolithic integrated circuits（MMIC）
K-band
load-pull
T/R multifunction
