摘要
基于CSMC 0.18μm工艺,设计了一款全CMOS结构的带隙基准源电路。电路正常工作时,所有MOS管均处于亚阈工作状态,从而保证了整个带隙基准电路芯片具有极低的功耗。在电压输出方面,通过分压降低负温度系数（CTAT）电压同时降低相应的正温度系数（PTAT）电压,使输出电压小于1 V。在温度系数方面,通过对CTAT电压进行分压降低负温度系数,配合级联PTAT电路,使温度系数能够精确可调。再经由PTAT电压调整管,极大改善了输出温度特性,得到较低的温度系数。后仿真结果表明该基准输出电压为495 mV,整体工作电流仅为8 nA,温度系数为4.86×10-6,工作温度为-50～150℃。该设计应用于低压差线性稳压器芯片中,芯片测试结果表明其性能良好。
An all-CMOS-structure band-gap reference circuit based on CSMC 0. 18 μm process was designed. When the circuit was working normally,all MOSFETs of the proposed circuit were in the subthreshold working status,thus ensuing extremely low power consumption of the bandgap reference circuit chip. In terms of the voltage output,the complementary proportional to absolute temperature（ CTAT）voltage was reduced by dividing the voltage while lowering the corresponding proportional to the absolute temperature（ PTAT） voltage,so that the output voltage was less than 1 V. In terms of the temperature coefficient,the negative temperature coefficient was reduced by dividing the CTAT,and the cascaded PTAT circuit was coordinated to make the temperature coefficient accurately adjustable. The post-simulation results show that the output reference voltage of the bandgap reference is 495 m V,the overall operating current is only 8 n A,the temperature coefficient is 4. 86×10-6,and the operating temperature range is-50-150 ℃. The design was applied to a low dropout linear regulator chip,and the chip test results show that its performance is good.
作者
刘锡锋
孙萍
居水荣
胡佳莉
Liu Xifeng;Sun Ping;Ju Shuirong;Hu Jiali(Jiaagsu Vocational College of Information Technology,Wuxi 21415 3,China)
出处
《半导体技术》
CAS
CSCD
北大核心
2018年第9期645-651,共7页
Semiconductor Technology
基金
江苏省教育厅资助项目(PPZY2015B190)
江苏省教育厅“青蓝工程”科技创新团队资助项目
关键词
全CMOS结构
带隙基准源
亚阈工作状态
低功耗
低温度系数
： all-CMOS-structure
band-gap reference
sub-threshold status
low power consumption
low temperature coefficient
